data sheet semiconductor http://www.yeashin.com 1 rev.02 20130305 SB820CT~sb8100ct schottky barrie r re ctif iers voltage 20 to 100 volts current - 8 .0 ampere fe a t ures ?e plasti c p a ckage has und e rw riters l aboratory flammability classi fica tion 94v -o u t ili zing flame retarda n t e poxy molding compound. ?e ex ceeds env ironmental standard s o f m i ls- 19500/22 8 ?e l o w pow er loss, high e ffi cien cy . ?e l o w forw rd v o ltge, hi gh curr ent cap ability ?e high surge capa city . ?e for u s e in low v o ltage ,high fre quen cy in v e rters free w heeling , and polarlity pro t ection applica t ion s . ?e high tempera t ure sol dering : 260 o c / 10 se cond s at te r m inals ?e pb free produ ct a t av ailable : 99% s n abov e meet rohs env ironment su bst a nce dire ctiv e reque st m e c h an i c al d a t a ?e ca se : to-2 20ab full molded pla s tic package ?e termina l s: lead solderab le p e r m i l- std-202, me thod 2 08 ?e polari ty : as m a r k ed. ?e m o u n ting po si tio n : a n y ?e m a xim u m r a ti ng s a n d electric a l ch a r a c teristi c s ratings a t 2 5 c am bient tempe r at ur e u n less o t herw i se sp ecified. single p hase , hal f w a v e , 60 hz, r e si sti v e or inductiv e load . for cap a ci tiv e load, dera t e curr ent by 20% SB820CT s b830ct s b840c t s b850ct s b860ct sb880ct sb8100ct units m a x i mum recurre n t peak rev e rse v o ltage 2 0 3 0 4 0 5 0 6 0 8 0 1 0 0 v max i mum r m s vo ltage 1 4 2 1 2 8 3 5 4 2 5 6 7 0 v m a xi mum dc bl o cki ng voltage 2 0 3 0 4 0 5 0 6 0 8 0 1 0 0 v m a x i mum a verage for w a rd rect if ie d current at tc=100c 8 a peak for w a rd surge current , 8.3 ms single half sine- w av e super i mposed on r a ted l o ad (j edec method) 1 5 0 a m a x i mum for w a rd voltage at 4.0 a per e l ement 0.55 0.75 0.85 v m a xi mum dc rever s e cur r e nt at tc=25 c dc blocking vo lta g e per ele m ent tc =100c 0.5 50 ma t y pical therma l r esistance note r ja 6.0 c / w oper ati ng and sto r age tempe r atur e range -5 5 to +150 c notes: 1. thermal re sista n ce jun c tion to am bient . to-220 ab unit:inch(mm) .419(10.66) .387(9.85) .134(3.40) min. .055(1.40) .039(1.00) .039(1.00) .019(0.50) .1(2.54) .1(2.54) .59(15.00) .50(12.70) .177(4.50) max. .624(15.87) .584(13.93) .269(6.85) .226(5.75) .196(5.00) .163(4.16) .059(1.50) .039(1.00) .025(0.65) max.
http://www.yeashin.com 2 rev.02 20130305 SB820CT~sb8100ct device characteristics inst ant aneous for wardcurrent instantaneous for ward voltage, volts a verage for ward current case temperature, c o 0 150 1.0 8.0 6.0 4.0 2.0 0 .4 .5 .6 . 7 . 8. 91. 0 1. 1 40 10 8 6 4 2 1.0 .8 .6 .4 .2 .1 instantaneous reverse current , m ilamperes 0 100 200 300 10 1.0 0.1 0.01 0.001 t= 100 c c o t=75c c o t=25c c o capacitance, pf reverse voltage,volts 1 2 5 10 20 50 100 400 350 300 250 200 150 0 200 500 peakfor wardsurge current , no.ofcycle a t 60hz 150 130 110 90 70 50 30 20 1 0 12 51020 50100 80v~100v 50v~60v 20v~40v percent of rated peak reverse voltage, % fig.1-forward current derating curve fig.4-maximum non-repetitive surge current fig.4-typical junction capacitance fig.3-typical reverse characteristics fig.2-typical instantaneous forward characteristic 100
marking information http ?g // www . y ea shin.com ? yeashin technology co., ltd. sb 8 xxct xxxx line 1: ys logo and date code the first half of line 1: ys logo the second half of line 1 : yy ww: year, yy ww : week. line 2 : device name and package type sb : schottky barrier rectifier xx : ampere series product. : the peak reverse voltage of product. line 3 : device structure symbol 8 8 xx 8
?Z packing ? dimension ? qty picture ?? bag/tube / ? 527mm*33mm*7mm 50 pcs inner box ? 555mm*140mm*55mm 2000 pcs carton 575mm*285mm *155mm 8000 pcs to/ito220 ? yeashin technology co., ltd. http ?g //www.yeashin.com
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